Title :
Fully integrated 0.25 μm CMOS VCSEL driver with current peaking
Author :
Annen, R. ; Melchior, H.
Author_Institution :
Inst. for Quantum Electron., Swiss Fed. Inst. of Technol., Zurich, Switzerland
fDate :
2/14/2002 12:00:00 AM
Abstract :
A vertical-cavity-surface-emitting laser (VCSEL) driver chip based on a novel circuit concept for current peaking has been designed and fabricated in a 0.25 μm complementary metal-oxide-semiconductor (CMOS) process. This concept allows the easy integration of a peaking driving scheme in CMOS. Experimental results show speed extension from 500 Mbit/s for current on-off to 3.9 Gbit/s for current peaking driving
Keywords :
CMOS integrated circuits; driver circuits; laser accessories; semiconductor lasers; surface emitting lasers; 0.25 micron; 500 Mbit/s to 3.9 Gbit/s; CMOS; VCSEL driver; current on-off; current peaking; peaking driving scheme; speed extension; vertical-cavity-surface-emitting laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020123
