DocumentCode :
1255602
Title :
High-brightness 735 nm tapered diode lasers
Author :
Sumpf, Bernd ; Hulsewede, R. ; Erbert, Gotz ; Dzionk, C. ; Fricke, J. ; Knauer, A. ; Pittroff, Wolfgang ; Ressel, P. ; Sebastian, J. ; Wenzel, Hans ; Trankle, Gunther
Author_Institution :
Ferdinand-Braun-Inst. fur Hochsfrequenstech., Berlin
Volume :
38
Issue :
4
fYear :
2002
fDate :
2/14/2002 12:00:00 AM
Firstpage :
183
Lastpage :
184
Abstract :
High brightness 735 nm single emitter tapered diode lasers were manufactured and analysed. A beam propagation factor M2 smaller than 1.4 is achieved up to an output power of 2 W
Keywords :
brightness; laser beams; laser transitions; quantum well lasers; 2 W; 735 nm; GaAs0.67P0.33-Al0.65Ga0.35 As-Al0.70 Ga0.30As; beam propagation factor; high-brightness 735 nm tapered diode lasers; output power; single emitter tapered diode lasers;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20020107
Filename :
986855
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1255602
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