Title :
Lateral insulated gate bipolar transistor (LIGBT) structure based on partial isolation SOI technology
Author :
Udrea, F. ; Milne, W. ; Popescu, Adrian
Author_Institution :
Dept. of Eng., Cambridge Univ.
fDate :
5/8/1997 12:00:00 AM
Abstract :
A new LIGBT structure is proposed based on partial isolation SOI technology and demonstrated through numerical simulations. In comparison with conventional SOI LIGBITs, the new structure offers an enhanced RESURF (REduced SURface Field) effect and improved heat dissipation with no compromise in the switching speed and on-state resistance
Keywords :
insulated gate bipolar transistors; isolation technology; power semiconductor switches; silicon-on-insulator; RESURF; heat dissipation; lateral insulated gate bipolar transistor; on-state resistance; partial isolation SOI technology; reduced surface field effect; switching speed;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970587
