Measurement of very long generation lifetimes in Si and SiGe epi-layers produced by LPCVD using MOS capacitors formed by plasma anodisation

The authors report results showing long minority carrier generation lifetime (>30 μs) in Si and SiGe epitaxial layers grown by LPCVD. The measurements were conducted on MOS capacitors realised by plasma oxidation at temperatures below 150°C. Capacitance voltage measurements showed very low MOS interface state densities (<3×10¹⁰ eV^-1 cm^-2). Oxide breakdown field strength was in excess of 8 MV/cm which together with the long lifetimes, demonstrate the high quality of the epitaxial layers and oxide