Measurement of very long generation lifetimes in Si and SiGe epi-layers produced by LPCVD using MOS capacitors formed by plasma anodisation

Author

Wu, Z.Y. ; Hall, S. ; Bonar, J.M ; Parker, G.J.

Author_Institution

Dept. of Electr. Eng. & Electron., Liverpool Univ., UK

Volume

33

Issue

10

fYear

1997

fDate

5/8/1997 12:00:00 AM

Firstpage

909

Lastpage

911

Abstract

The authors report results showing long minority carrier generation lifetime (>30 μs) in Si and SiGe epitaxial layers grown by LPCVD. The measurements were conducted on MOS capacitors realised by plasma oxidation at temperatures below 150°C. Capacitance voltage measurements showed very low MOS interface state densities (<3×10¹⁰ eV^-1 cm^-2). Oxide breakdown field strength was in excess of 8 MV/cm which together with the long lifetimes, demonstrate the high quality of the epitaxial layers and oxide

Keywords

Ge-Si alloys; MOS capacitors; anodisation; carrier lifetime; characteristics measurement; elemental semiconductors; interface states; minority carriers; semiconductor epitaxial layers; semiconductor growth; silicon; vapour phase epitaxial growth; LPCVD; MOS capacitors; MOS interface state densities; Si-SiGe; capacitance voltage measurements; epi-layers; minority carrier generation lifetime; oxide breakdown field strength; plasma anodisation;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19970556

Filename

592655