DocumentCode
1255635
Title
Photo-induced deposition of low dielectric constant polyimide film for interlayer dielectric applications
Author
Jun-ying Zhang ; Boyd, I.W.
Author_Institution
Dept. of Electron. & Electr. Eng., Univ. Coll. London
Volume
33
Issue
10
fYear
1997
fDate
5/8/1997 12:00:00 AM
Firstpage
911
Lastpage
912
Abstract
The photo-assisted conversion of polyamic acid spun onto Si substrates into thin polyimide films at low temperature using a 172 nm excimer lamp is reported. Current-voltage measurements showed that the leakage current densities in the polymer were over an order of magnitude less than those obtained in films prepared by conventional thermal processing
Keywords
dielectric thin films; integrated circuit interconnections; leakage currents; permittivity; polymer films; semiconductor technology; 172 nm; Si; current-voltage measurements; dielectric constant; interlayer dielectric applications; leakage current densities; polyamic acid; polyimide film;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19970603
Filename
592656
Link To Document