DocumentCode
1255643
Title
Polarisation-insensitive high-speed InGaAs metal-semiconductor-metal photodetectors
Author
Bottcher, E.H. ; Droge, E. ; Strittmatter, A. ; Bimberg, Dieter
Author_Institution
Inst. fur Festkorperphys. I, Tech. Univ. Berlin
Volume
33
Issue
10
fYear
1997
fDate
5/8/1997 12:00:00 AM
Firstpage
912
Lastpage
914
Abstract
High-speed InGaAs metal-semiconductor-metal (MSM) photodetectors with circularly shaped finger electrodes have been fabricated in order to minimise the strong polarisation dependence of the responsivity of conventional MSM detectors with linear finger electrodes. Under front illumination with 1.55 μm light, the circular devices with electrode feature sizes as small as 0.6 μm are demonstrated to be virtually free of polarisation effects. High-speed performance (3 dB bandwidth up to 18.5 GHz) is also reported
Keywords
III-V semiconductors; gallium arsenide; indium compounds; light polarisation; metal-semiconductor-metal structures; photodetectors; 0.6 micron; 1.5 GHz; 1.55 micrometre; InGaAs; circularly shaped finger electrodes; electrode feature sizes; front illumination; metal-semiconductor-metal photodetectors; polarisation dependence; responsivity;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19970597
Filename
592657
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