Title :
Polarisation-insensitive high-speed InGaAs metal-semiconductor-metal photodetectors
Author :
Bottcher, E.H. ; Droge, E. ; Strittmatter, A. ; Bimberg, Dieter
Author_Institution :
Inst. fur Festkorperphys. I, Tech. Univ. Berlin
fDate :
5/8/1997 12:00:00 AM
Abstract :
High-speed InGaAs metal-semiconductor-metal (MSM) photodetectors with circularly shaped finger electrodes have been fabricated in order to minimise the strong polarisation dependence of the responsivity of conventional MSM detectors with linear finger electrodes. Under front illumination with 1.55 μm light, the circular devices with electrode feature sizes as small as 0.6 μm are demonstrated to be virtually free of polarisation effects. High-speed performance (3 dB bandwidth up to 18.5 GHz) is also reported
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; light polarisation; metal-semiconductor-metal structures; photodetectors; 0.6 micron; 1.5 GHz; 1.55 micrometre; InGaAs; circularly shaped finger electrodes; electrode feature sizes; front illumination; metal-semiconductor-metal photodetectors; polarisation dependence; responsivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19970597
