• DocumentCode
    12560
  • Title

    Fabrication of MKIDS for the MicroSpec Spectrometer

  • Author

    Patel, Anup ; Brown, Andrew ; Hsieh, W. ; Stevenson, Tim ; Moseley, Samuel H. ; U-Yen, K. ; Ehsan, N. ; Barrentine, E. ; Manos, G. ; Wollack, E.J.

  • Author_Institution
    NASA Goddard Space Flight Center, Greenbelt, MD, USA
  • Volume
    23
  • Issue
    3
  • fYear
    2013
  • fDate
    Jun-13
  • Firstpage
    2400404
  • Lastpage
    2400404
  • Abstract
    Microspec is a new class of submillimeter and millimeter (250-700 μm wavelength) spectrometer, in which the wavelength separation and detection of incident light is done on a single substrate. The instrument is designed for space exploration by offering high spectral resolving power over a broad band, while being orders of magnitude smaller in mass and volume than the present state-of-the-art. The key enabling components for Microspec are background-limited microwave kinetic inductance detectors, which operate over the full bandwidth of the spectrometer. Here we present our fabrication strategy for making these sensitive detectors. A microstrip architecture utilizing a 0.45-μm crystalline silicon dielectric with a molybdenum nitride kinetic inductor material has been adopted. We have optimized wafer-scale lithographic patterning, and have developed processes that allow us to minimize surface roughness that may contribute to detector noise. Additionally, we have optimized the low-temperature wafer bonding process; this process allows us to build superconductors on both sides of the silicon dielectric layer. We present a final fabricated device and resonator operation at cryogenic temperatures.
  • Keywords
    cryogenics; lithography; microwave detectors; millimetre wave detectors; molybdenum compounds; silicon; submillimetre wave detectors; superconducting microwave devices; surface roughness; wafer bonding; MKIDS fabrication; background-limited microwave kinetic inductance detectors; broad band; cryogenic temperatures; crystalline silicon dielectric; detector noise; fabricated device; fabrication strategy; full bandwidth; incident light detection; low-temperature wafer bonding process; microspec spectrometer; microstrip architecture; molybdenum nitride kinetic inductor material; resonator operation; sensitive detectors; silicon dielectric layer; size 0.45 mum; space exploration; spectral resolving power; submillimeter wavelength spectrometer; surface roughness; wafer-scale lithographic patterning; wavelength 250 mum to 700 mum; wavelength separation; Detectors; Dielectrics; Fabrication; Microstrip; Niobium; Silicon; Substrates; Microstrip devices; microwave kinetic inductance detector (MKID); molybdenum nitride; niobium; spectrometer; wafer bonding;
  • fLanguage
    English
  • Journal_Title
    Applied Superconductivity, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1051-8223
  • Type

    jour

  • DOI
    10.1109/TASC.2013.2240152
  • Filename
    6412773