Title :
Molecular beam epitaxy growth and characterization of InGaP/InGaAs pseudomorphic high electron mobility transistors (HEMTs) having a channel layer over critical layer thickness
Author :
Jo, Seong-June ; Kim, Jeong Hoon ; Song, Jong-In
Author_Institution :
Dept. of Inf. & Commun., Kwangju Inst. of Sci. & Technol., South Korea
fDate :
3/1/2002 12:00:00 AM
Abstract :
In0.5Ga0.5P/InxGa1-xAs (x=0.33 and 0.40), pseudomorphic high electron mobility transistors (p-HEMTs) having a channel layer over the critical layer thickness were grown on patterned and nonpatterned GaAs substrates by using a compound-source molecular beam epitaxy (MBE). Characteristics of the highly strained InGaP/InxGa1-xAs (x=0.33 and 0.40) p-HEMTs grown on patterned substrates were compared with those of conventional InGaP/In0.22Ga0.78As p-HEMTs grown on a nonpatterned substrate. The highly strained InGaP/In0.33Ga 0.67As p-HEMT showed substantial improvements in device performances including DC (drain saturation current and transconductance), microwave (fT and fmax), low-frequency noise (Hooge parameter), and high-frequency noise (minimum noise figure and associated gain) characteristics compared with those of the conventional InGaP/In0.22Ga0.78As p-HEMT. The improvements in device performances of the highly strained InGaP/In0.33Ga0.67As p-HEMT are attributed to the improved transport property of the high-quality highly strained In0.33Ga0.67As channel layer achieved by the use of the patterned substrate growth. The results indicate the potential of highly strained InGaP/InxGa1-xAs p-HEMTs having a channel layer in excess of the critical layer thickness grown on patterned GaAs substrates for use in high-performance microwave device applications
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; microwave field effect transistors; molecular beam epitaxial growth; semiconductor device noise; semiconductor growth; substrates; DC characteristics; GaAs; HF noise characteristics; Hooge parameter; InGaP-In0.33Ga0.67; InGaP/InGaAs p-HEMT; LF noise characteristics; MBE growth; PHEMT characterization; channel layer; compound-source MBE; critical layer thickness; device performances; drain saturation current; gain; high electron mobility transistors; high-performance microwave device applications; highly strained InGaAs channel; microwave characteristics; minimum noise figure; molecular beam epitaxy growth; nonpatterned GaAs substrates; patterned GaAs substrates; pseudomorphic HEMT; transconductance; transport property; Electron mobility; Gallium arsenide; HEMTs; Indium gallium arsenide; Low-frequency noise; Microwave devices; Molecular beam epitaxial growth; Noise figure; PHEMTs; Substrates;
Journal_Title :
Electron Devices, IEEE Transactions on
