DocumentCode :
1256209
Title :
Analysis of Transient Currents During Ultrafast Switching of \\hbox {TiO}_{2} Nanocrossbar Devices
Author :
Hermes, C. ; Wimmer, M. ; Menzel, S. ; Fleck, K. ; Bruns, G. ; Salinga, M. ; Böttger, U. ; Bruchhaus, R. ; Schmitz-Kempen, T. ; Wuttig, M. ; Waser, R.
Author_Institution :
Peter Grunberg Inst., Forschungszentrum Julich GmbH, Julich, Germany
Volume :
32
Issue :
8
fYear :
2011
Firstpage :
1116
Lastpage :
1118
Abstract :
In this letter, bipolar fast-pulse switching in TiO2 -based nanocrossbar devices was investigated. A dedicated measurement setup was used to measure the transient currents during 5-ns resistive switching. Transient peak currents for the set and reset processes were as high as 200 and 230 μA, respectively. The currents observed during fast-pulse switching are explained and simulated by Joule heating, which is needed for fast oxygen-vacancy movement. The measured transient currents enable a further optimization of resistive switches based on TiO2.
Keywords :
bipolar transistor switches; nanoelectromechanical devices; semiconductor device measurement; titanium compounds; TiO2; bipolar fast-pulse switching; dedicated measurement setup; fast oxygen-vacancy movement; nanocrossbar devices; resistive switching; transient peak currents; ultrafast switching; Current measurement; Materials; Nanoscale devices; Resistance; Switches; Temperature distribution; Transient analysis; $hbox{TiO}_{2}$; Fast pulses; nanocrossbar device; resistive switching; transient current;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2156377
Filename :
5928381
Link To Document :
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