Title :
The effects of geometrical scaling on the frequency response and noise performance of SiGe HBTs
Author :
Zhang, Shiming ; Niu, Guofu ; Cressler, John D. ; Joseph, Alvin J. ; Freeman, Greg ; Harame, David L.
Author_Institution :
Electr. & Comput. Eng. Dept., Auburn Univ., AL, USA
fDate :
3/1/2002 12:00:00 AM
Abstract :
We examine the geometrical scaling issues in SiGe HBT technology. Width Scaling, length scaling, and stripe-number scaling are quantified from a radio frequency (RF) design perspective at 2 GHz. We conclude that a SiGe HBT with emitter area AE=0.5×20×6 μm2 is optimum for low noise applications at Jc=0.1 mA/μm2 and f=2 GHz using the design methodology, which guarantees optimal noise and input impedance matching with the simplest matching network. Finally, the optimal device sizes at f=4 and 6 GHz for low noise applications are also obtained using the same method
Keywords :
Ge-Si alloys; UHF bipolar transistors; frequency response; heterojunction bipolar transistors; microwave bipolar transistors; semiconductor device models; semiconductor device noise; semiconductor materials; 2 to 6 GHz; LNA; RF design perspective; SiGe; SiGe HBT technology; design methodology; geometrical scaling; length scaling; low noise applications; noise figure; noise model; optimal input impedance matching; optimal noise matching; stripe-number scaling; width scaling; Doping profiles; Frequency response; Germanium silicon alloys; Heterojunction bipolar transistors; Low-noise amplifiers; Microelectronics; Noise figure; Radio frequency; Semiconductor device noise; Silicon germanium;
Journal_Title :
Electron Devices, IEEE Transactions on
