The effects of geometrical scaling on the frequency response and noise performance of SiGe HBTs

Author

Zhang, Shiming ; Niu, Guofu ; Cressler, John D. ; Joseph, Alvin J. ; Freeman, Greg ; Harame, David L.

Author_Institution

Electr. & Comput. Eng. Dept., Auburn Univ., AL, USA

Volume

49

Issue

3

fYear

2002

fDate

3/1/2002 12:00:00 AM

Firstpage

429

Lastpage

435

Abstract

We examine the geometrical scaling issues in SiGe HBT technology. Width Scaling, length scaling, and stripe-number scaling are quantified from a radio frequency (RF) design perspective at 2 GHz. We conclude that a SiGe HBT with emitter area A_E=0.5×20×6 μm² is optimum for low noise applications at J_c=0.1 mA/μm² and f=2 GHz using the design methodology, which guarantees optimal noise and input impedance matching with the simplest matching network. Finally, the optimal device sizes at f=4 and 6 GHz for low noise applications are also obtained using the same method

Keywords

Ge-Si alloys; UHF bipolar transistors; frequency response; heterojunction bipolar transistors; microwave bipolar transistors; semiconductor device models; semiconductor device noise; semiconductor materials; 2 to 6 GHz; LNA; RF design perspective; SiGe; SiGe HBT technology; design methodology; geometrical scaling; length scaling; low noise applications; noise figure; noise model; optimal input impedance matching; optimal noise matching; stripe-number scaling; width scaling; Doping profiles; Frequency response; Germanium silicon alloys; Heterojunction bipolar transistors; Low-noise amplifiers; Microelectronics; Noise figure; Radio frequency; Semiconductor device noise; Silicon germanium;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.987113

Filename

987113