DocumentCode
1256232
Title
Low-power 2.5 Gbit/s VCSEL driver in 0.5 μm CMOS technology
Author
Madhavan, B. ; Levi, A.F.J.
Author_Institution
Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
Volume
34
Issue
2
fYear
1998
fDate
1/22/1998 12:00:00 AM
Firstpage
178
Lastpage
179
Abstract
0.5 μm CMOS technology is used to drive oxide-confined low-threshold current vertical cavity surface emitting laser diodes at 2.5 Gbit/s. The 7 mW power consumption for the optoelectronic transmitter is twenty times less than a 3.6 V electronic positive emitter coupled logic transmit circuit and four times less than a 3.6 V electronic low voltage differential signal transmit circuit
Keywords
CMOS integrated circuits; driver circuits; integrated optoelectronics; optical interconnections; optical transmitters; semiconductor lasers; surface emitting lasers; 0.5 micron; 2.5 Gbit/s; 7 mW; CMOS technology; VCSEL driver; optoelectronic transmitter; oxide-confined low-threshold current lasers; power consumption;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19981476
Filename
653185
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