Title :
Low-power 2.5 Gbit/s VCSEL driver in 0.5 μm CMOS technology
Author :
Madhavan, B. ; Levi, A.F.J.
Author_Institution :
Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
fDate :
1/22/1998 12:00:00 AM
Abstract :
0.5 μm CMOS technology is used to drive oxide-confined low-threshold current vertical cavity surface emitting laser diodes at 2.5 Gbit/s. The 7 mW power consumption for the optoelectronic transmitter is twenty times less than a 3.6 V electronic positive emitter coupled logic transmit circuit and four times less than a 3.6 V electronic low voltage differential signal transmit circuit
Keywords :
CMOS integrated circuits; driver circuits; integrated optoelectronics; optical interconnections; optical transmitters; semiconductor lasers; surface emitting lasers; 0.5 micron; 2.5 Gbit/s; 7 mW; CMOS technology; VCSEL driver; optoelectronic transmitter; oxide-confined low-threshold current lasers; power consumption;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981476
