• DocumentCode
    1256256
  • Title

    Vertical-Cavity Surface-Emitting Laser Light–Current Characteristic at Constant Internal Temperature

  • Author

    Hangauer, Andreas ; Chen, Jia ; Amann, Markus-Christian

  • Author_Institution
    Walter Schottky Inst., Tech. Univ. of Munich, Garching, Germany
  • Volume
    23
  • Issue
    18
  • fYear
    2011
  • Firstpage
    1295
  • Lastpage
    1297
  • Abstract
    Two continuous-wave measurement methods for the laser P-I-characteristic at a constant internal temperature are presented (constant average cavity and constant junction (active region) temperature). The methods are used to correctly quantify the temperature dependence of threshold current and differential quantum efficiency without need for pulsed measurements. It is found that the deviations between both temperatures can be as high as 5 K in a 1390-nm InP-based buried tunnel junction vertical-cavity surface-emitting laser (BTJ-VCSEL), which is the reason for the slight sublinearity of the characteristics at constant cavity temperature.
  • Keywords
    III-V semiconductors; indium compounds; surface emitting lasers; thermal variables measurement; InP; buried tunnel junction VCSEL; constant average cavity; constant internal temperature; constant junction temperature; differential quantum efficiency; light-current characteristic; threshold current; vertical-cavity surface-emitting laser; wavelength 1390 nm; Junctions; Measurement by laser beam; Temperature; Temperature measurement; Vertical cavity surface emitting lasers; Thermal variables measurement; thermal resistance; threshold current; vertical-cavity surface-emitting lasers;
  • fLanguage
    English
  • Journal_Title
    Photonics Technology Letters, IEEE
  • Publisher
    ieee
  • ISSN
    1041-1135
  • Type

    jour

  • DOI
    10.1109/LPT.2011.2160389
  • Filename
    5928388