DocumentCode
1256256
Title
Vertical-Cavity Surface-Emitting Laser Light–Current Characteristic at Constant Internal Temperature
Author
Hangauer, Andreas ; Chen, Jia ; Amann, Markus-Christian
Author_Institution
Walter Schottky Inst., Tech. Univ. of Munich, Garching, Germany
Volume
23
Issue
18
fYear
2011
Firstpage
1295
Lastpage
1297
Abstract
Two continuous-wave measurement methods for the laser P-I-characteristic at a constant internal temperature are presented (constant average cavity and constant junction (active region) temperature). The methods are used to correctly quantify the temperature dependence of threshold current and differential quantum efficiency without need for pulsed measurements. It is found that the deviations between both temperatures can be as high as 5 K in a 1390-nm InP-based buried tunnel junction vertical-cavity surface-emitting laser (BTJ-VCSEL), which is the reason for the slight sublinearity of the characteristics at constant cavity temperature.
Keywords
III-V semiconductors; indium compounds; surface emitting lasers; thermal variables measurement; InP; buried tunnel junction VCSEL; constant average cavity; constant internal temperature; constant junction temperature; differential quantum efficiency; light-current characteristic; threshold current; vertical-cavity surface-emitting laser; wavelength 1390 nm; Junctions; Measurement by laser beam; Temperature; Temperature measurement; Vertical cavity surface emitting lasers; Thermal variables measurement; thermal resistance; threshold current; vertical-cavity surface-emitting lasers;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2011.2160389
Filename
5928388
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