Title :
High power wide aperture AlGaAs-based lasers at 870 nm
Author :
Brien, S.O. ; Zhao, H. ; Lang, R.J.
Author_Institution :
SDL Inc., San Jose, CA, USA
fDate :
1/22/1998 12:00:00 AM
Abstract :
Wide aperture lasers are fabricated which produce record maximum powers of 11.3 and 16.5 W CW at 870 nm from 100 and 200 μm wide apertures, respectively. These powers are approximately two-fold higher than those previously reported in this wavelength regime and are also the highest reported CW powers from wide aperture lasers at any wavelength
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; semiconductor lasers; 100 micron; 11.3 W; 16.5 W; 200 micron; 870 nm; AlGaAs; CW powers; III-V semiconductors; cavity lengths; maximum powers; multimode lasers; semiconductor lasers; wide aperture lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980095
