Title :
Highly uniform characteristics 12-element 1.5 μm strain-compensated AlGaInAs/InP laser arrays with low threshold current and high characteristic temperature
Author :
Lin, Chia-Chien ; Liu, Kuo-Shung ; Wu, Meng-Chyi ; Shiao, Hung-Pin
Author_Institution :
Dept. of Mater. Sci. & Eng., Nat. Tsing Hua Univ., Hsinchu, Taiwan
fDate :
1/22/1998 12:00:00 AM
Abstract :
Highly uniform characteristic 12-element monolithic AlGaInAs/InP 1.5 μm strain-compensated multiquantum well ridge laser arrays with low threshold current and high characteristic temperature have been achieved. The array element exhibits a threshold current of 5.4 mA and a characteristic temperature of 90 K. Excellent uniformity, with standard deviations of 0.14 mA, 0.007 W/A, and 1.13 nm for threshold current, slope efficiency and lasing wavelength, respectively, were obtained
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; quantum well lasers; semiconductor laser arrays; 1.5 micrometre; 5.4 mA; 90 K; AlGaInAs-InP; III-V semiconductors; characteristic temperature; lasing wavelength; multiquantum well ridge laser arrays; slope efficiency; strain-compensated laser arrays; threshold current; uniformity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980211
