Title :
Faraday rotation of ferromagnetic (Ga,Mn)As
Author :
Kuroiwa, T. ; Yasuda, T. ; Matsukura, F. ; Shen, A. ; Ohno, Y. ; Segawa, Y. ; Ohno, H.
Author_Institution :
Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan
fDate :
1/22/1998 12:00:00 AM
Abstract :
Faraday rotation of (Ga,Mn)As, with an Mn composition of 0.043, is presented. The measurements were performed in the fundamental absorption edge region (1.24-1.8 eV) at 10 K (ferromagnetic phase) and at room temperature (paramagnetic phase). The magnetic behaviour of (Ga,Mn)As manifests itself in the magnetic field dependence of Faraday rotation, which was found to be proportional to the magnetisation of the sample. A large Faraday rotation of 6×104 deg/cm (at 0.1 T, 1.55 eV) at 10 K is observed. The Verdet constant at room temperature is 8×102 deg/G-cm (1.49 eV)
Keywords :
Faraday effect; exchange interactions (electron); ferromagnetic materials; gallium arsenide; magnetic epitaxial layers; magnetisation; manganese compounds; semiconductor epitaxial layers; semimagnetic semiconductors; visible spectra; (GaMn)As; 0.1 T; 1.24 to 1.8 eV; 10 K; Faraday rotation; MBE film; Verdet constant; diluted magnetic semiconductors; ferromagnetic phase; fundamental absorption edge region; magnetic field dependence; magnetisation; paramagnetic phase; spin-spin exchange interaction;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19980128
