Faraday rotation of ferromagnetic (Ga,Mn)As

Author

Kuroiwa, T. ; Yasuda, T. ; Matsukura, F. ; Shen, A. ; Ohno, Y. ; Segawa, Y. ; Ohno, H.

Author_Institution

Res. Inst. of Electr. Commun., Tohoku Univ., Sendai, Japan

Volume

34

Issue

2

fYear

1998

fDate

1/22/1998 12:00:00 AM

Firstpage

190

Lastpage

192

Abstract

Faraday rotation of (Ga,Mn)As, with an Mn composition of 0.043, is presented. The measurements were performed in the fundamental absorption edge region (1.24-1.8 eV) at 10 K (ferromagnetic phase) and at room temperature (paramagnetic phase). The magnetic behaviour of (Ga,Mn)As manifests itself in the magnetic field dependence of Faraday rotation, which was found to be proportional to the magnetisation of the sample. A large Faraday rotation of 6×10⁴ deg/cm (at 0.1 T, 1.55 eV) at 10 K is observed. The Verdet constant at room temperature is 8×10² deg/G-cm (1.49 eV)

Keywords

Faraday effect; exchange interactions (electron); ferromagnetic materials; gallium arsenide; magnetic epitaxial layers; magnetisation; manganese compounds; semiconductor epitaxial layers; semimagnetic semiconductors; visible spectra; (GaMn)As; 0.1 T; 1.24 to 1.8 eV; 10 K; Faraday rotation; MBE film; Verdet constant; diluted magnetic semiconductors; ferromagnetic phase; fundamental absorption edge region; magnetic field dependence; magnetisation; paramagnetic phase; spin-spin exchange interaction;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19980128

Filename

653193