Diffusion current and its effect on noise in submicron MOSFETs

Author

Obrecht, Michael S. ; Abou-Allam, Eyad ; Manku, Tajinder

Author_Institution

Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada

Volume

49

Issue

3

fYear

2002

fDate

3/1/2002 12:00:00 AM

Firstpage

524

Lastpage

526

Abstract

Reports a significant shot noise component in submicron metal-oxide-semiconductor field effect transistors (MOSFETs) operating in strong inversion. A quasi-three-dimensional (3D) MOSFET simulation was used to compare simulated noise parameters to measured data and to verify the model. For long channel devices, thermal noise was confirmed to be the main source of noise in accord with the conventional theory. In contrast, for submicron devices the shot noise appeared to be dominant. The shot noise component is primarily produced near the source of the device and is believed to be caused by the diffusion current

Keywords

MOSFET; current density; diffusion; semiconductor device models; semiconductor device noise; shot noise; thermal noise; diffusion current; long channel devices; quasi-three-dimensional simulation; shot noise component; simulated noise parameters; strong inversion; submicron MOSFETs; submicron devices; thermal noise; CMOS technology; Circuit noise; Design optimization; Electrons; FETs; MOSFETs; Noise measurement; Numerical simulation; Radio frequency; Semiconductor device noise;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.987126

Filename

987126