Photonic high-frequency capacitance-voltage characterization of interface states in metal-oxide-semiconductor capacitors

Author

Kim, D.M. ; Kim, H.C. ; Kim, H.T.

Author_Institution

Sch. of Electr. Eng., Kookmin Univ., Seoul, South Korea

Volume

49

Issue

3

fYear

2002

fDate

3/1/2002 12:00:00 AM

Firstpage

526

Lastpage

528

Abstract

A new characterization method based on the photonic high-frequency capacitance-voltage (HF C-V) response of metal-oxide semiconductor (MOS) capacitors is reported for the analysis of interface states in MOS systems. An optical source with a photon energy less than the silicon band-gap (hν = 0.799 eV < E_g = 1.11 eV) is employed for the photonic characterization of interface states (Bit) distributed in the photoresponsive energy band (E_c hν < E_it < E_c) in NMOS capacitors with a polysilicon gate. Assuming a uniform distribution of the trap levels, the density of interface states (D_it) was observed to be D_it 1-5 × 10 ¹¹ eV^-1 cm^-2 in the photoresponsive energy band

Keywords

MOS capacitors; MOSFET; characteristics measurement; electron traps; electronic density of states; elemental semiconductors; interface states; semiconductor device measurement; silicon; silicon compounds; 0.799 to 1.11 eV; NMOS capacitors; Si-SiO₂; density of interface states; metal-oxide-semiconductor capacitors; optical source; photon energy; photonic high-frequency capacitance-voltage characterization; photoresponsive energy band; polysilicon gate; trap levels; uniform distribution; Capacitance; Capacitance-voltage characteristics; Heterojunctions; Interface states; Lighting; MOS capacitors; MOS devices; MOSFETs; Photonic band gap; Silicon;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.987127

Filename

987127