DocumentCode :
1256324
Title :
Electron escape time from single quantum wells
Author :
Lefebvre, Kevin R. ; Anwar, A.F.M.
Author_Institution :
Dept. of Electr. & Syst. Eng., Connecticut Univ., Storrs, CT, USA
Volume :
33
Issue :
2
fYear :
1997
fDate :
2/1/1997 12:00:00 AM
Firstpage :
187
Lastpage :
191
Abstract :
A theoretical model for electrons escaping a quantum well under the influence of an applied electric field is developed. Both the thermionic emission and tunneling components of the currents are calculated, taking into account the proper partitioning between the two currents. The group velocity for a nonuniform electron distribution within the quantum well, which is a function of position and energy, and the continuous energy dependence of the quantum well density of states is considered. A comparison between this model and previously reported experimental results are made which demonstrates excellent agreement
Keywords :
electronic density of states; semiconductor device models; semiconductor quantum wells; thermionic electron emission; tunnelling; applied electric field; continuous energy dependence; electron escape time; energy; group velocity; nonuniform electron distribution; partitioning; position; quantum well density of states; single quantum wells; theoretical model; thermionic emission; tunneling components; Carrier confinement; Charge carrier processes; Dark current; Electron emission; Infrared detectors; Quantum mechanics; Quantum well devices; Semiconductor devices; Thermionic emission; Tunneling;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.552258
Filename :
552258
Link To Document :
بازگشت