DocumentCode :
1256344
Title :
CMOS RF Low-Noise Amplifier Design for Variability and Reliability
Author :
Liu, Yidong ; Yuan, Jiann-shiun
Author_Institution :
Univ. of Central Florida, Orlando, FL, USA
Volume :
11
Issue :
3
fYear :
2011
Firstpage :
450
Lastpage :
457
Abstract :
An adaptive substrate (body) bias design for variability and reliability for a CMOS low-noise amplifier (LNA) is analyzed. The proposed body biasing scheme provides a radio-frequency circuit that is resilient to process variations and device reliability. Small-signal models including substrate bias effect are developed for noise figure and small-signal power gain sensitivity. The cascode LNA operating at 24 GHz with the adaptive substrate bias scheme is compared with the LNA without body bias using the PTM 65-nm technology. The modeling and simulation results show that the adaptive substrate bias reduces the sensitivity of noise figure and minimum noise figure subject to process variations and device aging such as threshold voltage shift and electron mobility degradation.
Keywords :
CMOS integrated circuits; MMIC amplifiers; field effect MMIC; integrated circuit reliability; low noise amplifiers; CMOS RF low-noise amplifier design; adaptive substrate bias design; device aging; device reliability; electron mobility degradation; frequency 24 GHz; noise figure; process variations; size 65 nm; small-signal models; small-signal power gain sensitivity; threshold voltage shift; Integrated circuit reliability; Logic gates; Noise; Substrates; Threshold voltage; Transistors; Adaptive body bias; Monte Carlo simulation; design for reliability (DFR); low-noise amplifier (LNA); noise figure; radio frequency (RF); small-signal model; variability;
fLanguage :
English
Journal_Title :
Device and Materials Reliability, IEEE Transactions on
Publisher :
ieee
ISSN :
1530-4388
Type :
jour
DOI :
10.1109/TDMR.2011.2160350
Filename :
5928400
Link To Document :
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