• DocumentCode
    1256361
  • Title

    Mid-infrared Suspended Membrane Waveguide and Ring Resonator on Silicon-on-Insulator

  • Author

    Cheng, Zhongyuan ; Chen, Xia ; Wong, C. Y. ; Xu, Ke ; Tsang, Hon Ki

  • Author_Institution
    Department of Electronic Engineering, The Chinese University of Hong Kong, Hong Kong
  • Volume
    4
  • Issue
    5
  • fYear
    2012
  • Firstpage
    1510
  • Lastpage
    1519
  • Abstract
    Theoretical and experimental studies of mid-infrared (mid-IR) suspended membrane waveguide (SMW) and suspended membrane ring (SMR) resonator are presented. An array of periodical holes beside the rib waveguide facilitates the local removal of buried oxide to form suspended membrane devices on silicon-on-insulator (SOI). The waveguide design is optimized in terms of hole size, etch depth, and bend radius to minimize device strain and optical loss. We calculate waveguide dimension to attain the wide low-dispersion ( \\pm 100 ps/nm/km) bandwidth for the wavelength range from 2.0 to 8.0 \\mu \\hbox {m} , and optical nonlinearity is also studied. The SMWs are fabricated on a commercial SOI wafer and characterized by an \\hbox {Er}^{3+} - \\hbox {Pr}^{3+} codoped fiber laser at 2.75 \\mu\\hbox {m} . Negligible bending losses are measured for a 40- \\mu\\hbox {m} radius bend. The minimum waveguide loss of 3.0 \\pm 0.7 dB/cm is measured experimentally. The SMR resonator has a quality factor ( Q ) of \\sim 10 000 and an extinction ratio of \\sim 13 dB in near-IR. In mid-IR, the resonator has a Q of \\sim 8100.
  • Keywords
    Dispersion; Finite element methods; Infrared spectra; Optical ring resonators; Optical waveguides; Scanning electron microscopy; Silicon on insulator technology; Mid-IR devices; dispersion; nonlinear; ring resonator; silicon-on-insulator; suspended membrane waveguide;
  • fLanguage
    English
  • Journal_Title
    Photonics Journal, IEEE
  • Publisher
    ieee
  • ISSN
    1943-0655
  • Type

    jour

  • DOI
    10.1109/JPHOT.2012.2210700
  • Filename
    6256678