Repetition-frequency tuning of monolithic passively mode-locked semiconductor lasers with integrated extended cavities

Author

Arahira, Shin ; Ogawa, Yoh

Author_Institution

Semicond. Technol. Lab., Oki Electr. Ind. Co. Ltd., Tokyo, Japan

Volume

33

Issue

2

fYear

1997

fDate

2/1/1997 12:00:00 AM

Firstpage

255

Lastpage

264

Abstract

Repetition-frequency tuning characteristics of passively mode-locked laser diodes (LDs) were investigated in detail. Anomalous tuning characteristics were observed when the bias conditions of the LDs were changed. Theoretical analysis using conventional self-consistent mode-locking theory showed that the anomaly originated from the change of the detuning from the cavity´s round-trip frequency due to gain/absorption saturation effects in the passively mode-locked lasers. A wide tuning range of 280 MHz (1.6% of the repetition frequency) was obtained by changing the bias conditions of the extended cavity

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; integrated optics; laser cavity resonators; laser mode locking; laser tuning; optical fabrication; optical saturable absorption; quantum well lasers; vapour phase epitaxial growth; 280 MHz; InGaAs-InGaAsP; MOVPE fabrication; absorption saturation effects; anomalous tuning characteristics; bias conditions; detuning; extended cavity; gain effects; integrated extended cavities; monolithic passively mode-locked semiconductor lasers; multiple-quantum well structure; passively mode-locked lasers; repetition-frequency tuning; round-trip frequency; self-consistent mode-locking theory; tuning characteristics; tuning range; Diode lasers; Frequency; Laser mode locking; Laser theory; Laser tuning; Optical pulses; Optical tuning; Optical waveguides; Semiconductor lasers; Timing jitter;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/3.552266

Filename

552266