DocumentCode
1256569
Title
Spectral Evidence of Si Complexes in HVPE-Grown GaAs
Author
Bohn, Matthew J. ; Guiney, William ; Lynch, Candace ; Bliss, David F.
Author_Institution
Air Force Inst. of Technol., Wright-Patterson AFB, OH, USA
Volume
24
Issue
4
fYear
2011
Firstpage
519
Lastpage
522
Abstract
Evidence of Si complexes was discovered in low temperature photoluminescence (PL) spectra recorded from GaAs grown by hydride vapor phase epitaxy and were measured as a function of secondary HCl flow. In addition, time resolved PL of the samples measured long radiative lifetimes, substantiating the excellent quality of the crystalline growth.
Keywords
III-V semiconductors; crystal growth from vapour; gallium arsenide; radiative lifetimes; silicon; vapour phase epitaxial growth; GaAs-Si; crystalline growth; gallium arsenide; hydride vapor phase epitaxy; low temperature photoluminescence spectra; radiative lifetime; secondary HCl flow; silicon complex; Crystals; Epitaxial growth; Gallium arsenide; Photoluminescence; Silicon; GaAs; HVPE; orientationally patterned; photoluminescence; ultrafast;
fLanguage
English
Journal_Title
Semiconductor Manufacturing, IEEE Transactions on
Publisher
ieee
ISSN
0894-6507
Type
jour
DOI
10.1109/TSM.2011.2160300
Filename
5928430
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