DocumentCode
1256624
Title
Ultrawideband biasing of MMIC distributed amplifiers using improved active load
Author
Robertson, Ian D. ; Aghvami, Hamid
Author_Institution
Dept. of Electron. & Electr. Eng., King´s Coll., London Univ., UK
Volume
27
Issue
21
fYear
1991
Firstpage
1907
Lastpage
1909
Abstract
An improved technique is presented for biasing FETs in ultrawideband circuits, such as the GaAs MMIC distributed amplifier. The technique uses an improved active load, which has a DC operating characteristic that is controlled by a resistor chain. The improved active load has been applied to a 0.5-13 GHz monolithic distributed active signal combiner. The circuit gives excellent bandwidth, and is insensitive to the DC bias voltages.
Keywords
MMIC; field effect integrated circuits; microwave amplifiers; wideband amplifiers; 0.5 to 13 GHz; DC operating characteristic; FET biasing; GaAs; MMIC; SHF; active load; active signal combiner; distributed amplifiers; monolithic microwave IC; resistor chain; ultrawideband circuits;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19911184
Filename
98840
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