Device Design Engineering for Optimum Analog/RF Performance of Nanoscale DG MOSFETs

Analog/RF performance of double-gate MOSFETs in the sub-20-nm regime is investigated using ATLAS device simulator. It is shown that graded channel dual material double gate (GCDMDG) achieves higher drain current, peak transconductance, and higher values of cutoff frequency at lower drain currents. This novel architecture also provides better intrinsic gain for an amplifier. A new analog/RF figure of merit, gain transconductance frequency product (GTFP) is proposed that includes both the switching speed and intrinsic gain of the device and is very useful for circuit design. The peak GTFP is observed at the higher end of moderate inversion, slightly above threshold. The GCDMDG device outperforms in terms of GTFP and is more favorable for shorter channel length devices.