DocumentCode
1256630
Title
InAlAs/InGaAs/InP HEMTs with high breakdown voltages using double-recess gate process
Author
Boos, J. Brad ; Kruppa, W.
Author_Institution
Naval Res. Lab., Washington, DC, USA
Volume
27
Issue
21
fYear
1991
Firstpage
1909
Lastpage
1910
Abstract
The DC and RF performance of InAlAs/InGaAs/InP HEMTs fabricated using a double-recess gate process are reported. A gate-drain breakdown voltage as high as 16 V was observed. The HEMTs also exhibited a high source-drain breakdown voltage near pinchoff of 16 V and a low RF output conductance of 6 mS/mm. For a 1.4 mu m gate length, an intrinsic transconductance of 560 mS/mm and fT and fmax values of 16 and 40 GHz, respectively, were achieved.
Keywords
III-V semiconductors; aluminium compounds; electric breakdown of solids; gallium arsenide; high electron mobility transistors; indium compounds; solid-state microwave devices; 1.4 micron; 16 GHz; 16 V; 40 GHz; 560 mS; 6 mS; DC performance; HEMTs; InAlAs-InGaAs-InP; RF performance; double-recess gate process; gate length; gate-drain breakdown voltage; high breakdown voltages; intrinsic transconductance; microwave device; output conductance; source-drain breakdown voltage;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19911185
Filename
98841
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