Title :
Experimental Assessment of Electrons and Holes in Erase Transient of TANOS and TANVaS Memories
Author :
Suhane, Amit ; Arreghini, Antonio ; Van den Bosch, Geert ; Vandelli, Luca ; Padovani, Andrea ; Breuil, Laurent ; Larcher, Luca ; De Meyer, Kristin ; Van Houdt, Jan
Author_Institution :
Imec, Leuven, Belgium
Abstract :
We present carrier separation experiments based on direct charge measurement to assess the contributions of electrons and holes to the erase transient of TANOS-like nonvolatile memories. The role of different carrier species is analyzed as a function of erase voltage and charge configuration at the initial programmed state. We extend the analysis to band-engineered tunneling barriers, demonstrating that the performance improvement in these devices lies more on the enhancement of hole current rather than that of the electron one.
Keywords :
charge measurement; random-access storage; TANOS-like nonvolatile memories; TANVaS memories; band-engineered tunneling barriers; charge configuration; direct charge measurement; electrons; erase transient; erase voltage; hole current; Charge carrier processes; Charge measurement; Current measurement; Flash memory; Logic gates; Nonvolatile memory; Performance analysis; Programming; Quantum computing; SONOS devices; Silicon compounds; Transient analysis; Tunneling; Voltage; Carrier separation; TANOS; TANVaS; VariOT; erase transient;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2055824
