• DocumentCode
    1256735
  • Title

    Improvement of Resistive Switching Uniformity by Introducing a Thin GST Interface Layer

  • Author

    Lv, Hangbing ; Wan, Haijun ; Tang, Tingao

  • Author_Institution
    Microelectron. Dept., Fudan Univ., Shanghai, China
  • Volume
    31
  • Issue
    9
  • fYear
    2010
  • Firstpage
    978
  • Lastpage
    980
  • Abstract
    Broad dispersions of operation parameters are generally observed with continuous resistive switching. In this letter, we explore a prototype resistive random access memory (RRAM) device for switching uniformity improvement. Compared with Al/CuxO/Cu structure, by introducing a thin phase-change Ge2Sb2Te5 (GST) film between CuxO and Al top electrode, the device exhibits much better resistive hysteresis and switching uniformity. A combined filamentary conduction model is proposed to clarify the role of GST layer on the resistive switching stabilization.
  • Keywords
    aluminium; antimony compounds; copper compounds; germanium compounds; random-access storage; Al-CuxO-Cu; Ge2Sb2Te5; continuous resistive switching; resistive random access memory; resistive switching stabilization; resistive switching uniformity; thin phase-change film; Conducting materials; Copper; Crystals; Electrodes; Inorganic materials; Material storage; Microelectronics; Oxidation; Random access memory; Resistance; Switches; Tellurium; X-ray scattering; Confined filament; resistive random access memory (RRAM); resistive switching;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2010.2055534
  • Filename
    5523883
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1256735