• DocumentCode
    1256740
  • Title

    Boron redistribution during RTP formation of tungsten disilicide

  • Author

    Essaadani, A. ; Dupuy, J.C. ; Marjan, M.

  • Author_Institution
    Lab. de Phys. de la Matiere, INSA Lyon, Villeurbanne, France
  • Volume
    27
  • Issue
    21
  • fYear
    1991
  • Firstpage
    1916
  • Lastpage
    1918
  • Abstract
    Boron redistribution during WSi2 formation from a boron implanted Si
  • Keywords
    boron; chemical interdiffusion; diffusion in solids; incoherent light annealing; integrated circuit technology; metallisation; tungsten compounds; 850 degC; B redistribution; IC metallisation; RTP formation; SIMs profiling; Si:B; W sputtering deposition; W-Si:B; W-WSi 2 interface; WSi 2 formation; annealing time; diffusion;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19911190
  • Filename
    98846
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1256740