DocumentCode
1256863
Title
High-speed InGaAsP/InP multiple quantum well, 1.55 mu m singlemode modulator
Author
Devaux, F. ; Bigan, E. ; Rose, B. ; McKee, Mac ; Huet, Fabrice ; Carre, M.
Author_Institution
CNET, Bagneux, France
Volume
27
Issue
21
fYear
1991
Firstpage
1926
Lastpage
1927
Abstract
1.55 mu m single mode ridge waveguide modulators based on electroabsorption in InGaAsP/InP multiple quantum wells (MQW) are reported. A 10 dB extinction ratio was obtained by applying a 2 V drive voltage to a 100 mu m long device with a 3 dB on-state loss. The 3 dB cutoff frequency is 12.5 GHz.
Keywords
III-V semiconductors; electro-optical devices; electroabsorption; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical modulation; optical waveguide components; semiconductor quantum wells; 1.55 micron; 12.5 GHz; 2 V; 3 dB; InGaAsP-InP multiple quantum wells; cutoff frequency; drive voltage; electroabsorption; extinction ratio; quantum confined Stark effect; single mode ridge waveguide modulators;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19911196
Filename
98852
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