Title :
Highly Reliable Amorphous Silicon Gate Driver Using Stable Center-Offset Thin-Film Transistors
Author :
Choi, Jae Won ; Kim, Jae Ik ; Kim, Se Hwan ; Jang, Jin
Author_Institution :
Adv. Display Res. Center, Kyung Hee Univ., Seoul, South Korea
Abstract :
This paper reports a highly reliable hydrogenated amorphous silicon (a-Si:H) gate driver using center-offset thin-film transistors (TFTs). The a-Si:H TFTs with a center-offset structure are demonstrated to be highly reliable compared to a conventional a-Si:H TFT. The Vth shift of center-offset a-Si:H TFTs was found to be 35% less than that of the conventional a-Si:H TFT. Therefore, the center-offset a-Si:H TFTs are used as pull-down TFTs in the gate driver circuit. When the center-offset pull-down TFTs are used in the a-Si:H gate driver, the output off-state of the gate driver remains stable for periods longer than 3 × 108 s.
Keywords :
amorphous semiconductors; driver circuits; elemental semiconductors; hydrogen; silicon; thin film transistors; Si:H; TFT; center-offset structure; high reliable amorphous silicon gate driver circuit; stable center-offset thin-film transistors; Active matrix liquid crystal displays; Amorphous silicon; Circuit stability; Costs; Driver circuits; Fabrication; Glass; Logic gates; Research and development; Silicon compounds; Stability; Stress; Thin film transistors; Amorphous materials; integrated circuits; shift registers; thin-film transistors (TFTs);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2010.2054453
