Intrinsic Capacitance Characteristics of Top-Contact Organic Thin-Film Transistors

Author

Kim, Kangmin ; Kim, Youngmin

Author_Institution

Samsung Electron., Asan, South Korea

Volume

57

Issue

9

fYear

2010

Firstpage

2344

Lastpage

2347

Abstract

We present the intrinsic capacitance characteristics of a pentacene-based polystyrene-gate organic thin-film transistor (OTFT). Intrinsic capacitance values (C_GD, C_GS) at each terminal of the OTFT were experimentally measured for various frequencies and dc bias voltages. The measured results illustrate that the intrinsic capacitance of an OTFT can be understood by considering a charge control mechanism, suggesting the validity of Meyer´s capacitance model for the charge storage effect of OTFTs.

Keywords

organic field effect transistors; thin film transistors; DC bias voltages; Meyer capacitance model; OTFT; charge control mechanism; charge storage effect; intrinsic capacitance characteristics; pentacene-based polystyrene-gate organic thin-film transistor; top-contact organic thin-film transistors; Capacitance; Capacitance measurement; Capacitance-voltage characteristics; Charge measurement; Current measurement; Electrodes; Frequency measurement; Logic gates; Organic thin film transistors; Pentacene; Thin film transistors; Voltage; Overlap capacitance of source/drain (S/D); pentacene organic thin-film transistor (OTFT);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2010.2055312

Filename

5523930