• DocumentCode
    1257190
  • Title

    A new ZVT-PWM DC-DC converter

  • Author

    Bodur, Hacý ; Bakan, A. Faruk

  • Author_Institution
    Electr. Eng. Dept., Yildiz Tech. Univ., Istanbul, Turkey
  • Volume
    17
  • Issue
    1
  • fYear
    2002
  • fDate
    1/1/2002 12:00:00 AM
  • Firstpage
    40
  • Lastpage
    47
  • Abstract
    In this paper, a new active snubber cell that overcomes most of the drawbacks of the normal "zero voltage transition-pulse width modulation" (ZVT-PWM) converter is proposed to contrive a new family of ZVT-PWM converters. A converter with the proposed snubber cell can also operate at light load conditions. All of the semiconductor devices in this converter are turned on and off under exact or near zero voltage switching (ZVS) and/or zero current switching (ZCS). No additional voltage and current stresses on the main switch and main diode occur. Also, the auxiliary switch and auxiliary diodes are subjected to voltage and current values at allowable levels. Moreover, the converter has a simple structure, low cost, and ease of control. A ZVT-PWM boost converter equipped with the proposed snubber cell is analyzed in detail. The predicted operation principles and theoretical analysis of the presented converter are verified with a prototype of a 2 kW and 50 kHz PWM boost converter with insulated gate bipolar transistor (IGBT). In this study, a design procedure of the proposed active snubber cell is also presented. Additionally, at full output power in the proposed soft switching converter, the main switch loss is about 27% and the total circuit loss is about 36% of that in its counterpart hard switching converter, and so the overall efficiency, which is about 91% in the hard switching case, increases to about 97%
  • Keywords
    DC-DC power convertors; PWM power convertors; insulated gate bipolar transistors; snubbers; switching circuits; 2 kW; 50 kHz; 91 percent; 97 percent; IGBT; ZCS; ZVS; ZVT-PWM DC-DC converter; active snubber cell; auxiliary diodes; auxiliary switch; insulated gate bipolar transistor; light load conditions; main switch loss; near zero voltage switching; operation principles; total circuit loss; zero current switching; DC-DC power converters; Insulated gate bipolar transistors; Semiconductor devices; Semiconductor diodes; Snubbers; Switches; Switching circuits; Switching converters; Zero current switching; Zero voltage switching;
  • fLanguage
    English
  • Journal_Title
    Power Electronics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0885-8993
  • Type

    jour

  • DOI
    10.1109/63.988668
  • Filename
    988668