DocumentCode
1257266
Title
GaAs/AlGaAs quantum well laser with monolithically integrated extended glass waveguide cavity
Author
Wu, Ming C. ; Chen, Y.J. ; Ho, P.-T.
Author_Institution
Dept. of Electr. Eng., Maryland Univ. Baltimore, MD, USA
Volume
27
Issue
21
fYear
1991
Firstpage
1954
Lastpage
1956
Abstract
The fabrication and characteristics of a GaAs/AlGaAs quantum well laser with a monolithically integrated extended glass waveguide cavity (EGWC) are described. The added glass waveguide expanded the laser beam in both the lateral and vertical directions and reduced the lateral far field divergence angle from 8 to 2 degrees . Single-longitudinal mode CW operation caused by the EGWC is demonstrated.
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; laser cavity resonators; laser mode locking; optical waveguide components; semiconductor junction lasers; CW operation; EGWC; GaAs-AlGaAs; characteristics; extended glass waveguide cavity; fabrication; far field divergence reduction; laser beam expansion; monolithically integrated glass waveguide; quantum well laser; semiconductors; single longitudinal mode;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19911212
Filename
98868
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