Title :
GaAs/AlGaAs quantum well laser with monolithically integrated extended glass waveguide cavity
Author :
Wu, Ming C. ; Chen, Y.J. ; Ho, P.-T.
Author_Institution :
Dept. of Electr. Eng., Maryland Univ. Baltimore, MD, USA
Abstract :
The fabrication and characteristics of a GaAs/AlGaAs quantum well laser with a monolithically integrated extended glass waveguide cavity (EGWC) are described. The added glass waveguide expanded the laser beam in both the lateral and vertical directions and reduced the lateral far field divergence angle from 8 to 2 degrees . Single-longitudinal mode CW operation caused by the EGWC is demonstrated.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optics; laser cavity resonators; laser mode locking; optical waveguide components; semiconductor junction lasers; CW operation; EGWC; GaAs-AlGaAs; characteristics; extended glass waveguide cavity; fabrication; far field divergence reduction; laser beam expansion; monolithically integrated glass waveguide; quantum well laser; semiconductors; single longitudinal mode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19911212
