DocumentCode
1257548
Title
On Dynamic Effects Influencing IGBT Losses in Soft-Switching Converters
Author
Ranstad, Per ; Nee, Hans-Peter
Author_Institution
Alstom Power, Vaxjo, Sweden
Volume
26
Issue
1
fYear
2011
Firstpage
260
Lastpage
271
Abstract
Two different dynamic effects influencing the insulated gate bipolar transistor (IGBT) losses in soft-switching converters are demonstrated. The first one, the Dynamic tail-charge effect shows that the tail charge is dependent not only on the absolute value of the current at turn-off, but also on the dynamics of the current. This effect may have a significant impact on the optimization of zero-current-switching converters. The Dynamic conduction losses originate from the conductivity modulation lag of the IGBT. It is shown by experiments that the on-state losses depend on the operating frequency. Different methods to accurately determine the on-state losses are evaluated. It was found that the best method is an indirect measurement, where the stray inductance is identified by the use of an oscillating circuit. The experiments are performed under a sinusoidal current excitation at a fixed amplitude (150 A) for different frequencies (up to 104 kHz). The switching devices used are IGBT modules rated 300-400 A/1200 V in a bridge-leg configuration. From the experiments performed, it is found that IGBTs of a modern punch-though (PT) designs have the lowest losses in the series-loaded resonant converters studied in this paper.
Keywords
bridge circuits; insulated gate bipolar transistors; optimisation; oscillations; switching convertors; zero current switching; IGBT loss; bridge-leg configuration; conductivity modulation; current 300 A to 400 A; dynamic conduction loss; dynamic tail-charge effect; indirect measurement; insulated gate bipolar transistor; optimization; oscillating circuit; punch-though design; series-loaded resonant converter; sinusoidal current excitation; soft-switching converter; stray inductance; voltage 1200 V; zero-current-switching converter; Conductivity; Converters; Current measurement; Insulated gate bipolar transistors; Modulation; Permission; Resonance; Snubbers; Switching converters; Switching frequency; Switching loss; Zero current switching; Zero voltage switching; Conductivity modulation; insulated gate bipolar transistor (IGBT); resonant converters; soft switching; tail current;
fLanguage
English
Journal_Title
Power Electronics, IEEE Transactions on
Publisher
ieee
ISSN
0885-8993
Type
jour
DOI
10.1109/TPEL.2010.2055581
Filename
5524003
Link To Document