DocumentCode
1257773
Title
Development of copper wire bonding application technology
Author
Toyozawa, Kenji ; Fujita, Kazuya ; Minamide, Syozo ; Maeda, Takamichi
Author_Institution
Sharp Corp., Nara, Japan
Volume
13
Issue
4
fYear
1990
fDate
12/1/1990 12:00:00 AM
Firstpage
667
Lastpage
672
Abstract
The continuous forming of oxide-free, stable, spherical copper balls which has been realized by blowing a reducing gas over the copper wire during copper ball formation (sparkling) is described. The prevention of chip damage resulting from hard copper wire, including underpad cracking and silicon cratering, by the double-load wire bonding technology is discussed; this technology can minimize chip damage from wire bonding stress because the bonding load is decreased during ultrasonic power oscillation. It was confirmed that copper wires have a reliability equivalent to that of gold wires. The double-load wire bonding technology makes it possible to use copper wires in MOS LSI devices on a commercial basis
Keywords
MOS integrated circuits; copper; integrated circuit technology; large scale integration; lead bonding; reliability; Cu wire bonding; IC chips; MOS LSI chips; chip damage; computer simulation; double-load wire bonding technology; oxide-free spherical Cu balls; pull test; reliability; sparkling; ultrasonic power oscillation; underpad cracking; Aluminum; Bonding; Copper; Gold; Large scale integration; Manufacturing; Semiconductor films; Silicon; Stress; Wire;
fLanguage
English
Journal_Title
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
Publisher
ieee
ISSN
0148-6411
Type
jour
DOI
10.1109/33.62577
Filename
62577
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