• DocumentCode
    1257773
  • Title

    Development of copper wire bonding application technology

  • Author

    Toyozawa, Kenji ; Fujita, Kazuya ; Minamide, Syozo ; Maeda, Takamichi

  • Author_Institution
    Sharp Corp., Nara, Japan
  • Volume
    13
  • Issue
    4
  • fYear
    1990
  • fDate
    12/1/1990 12:00:00 AM
  • Firstpage
    667
  • Lastpage
    672
  • Abstract
    The continuous forming of oxide-free, stable, spherical copper balls which has been realized by blowing a reducing gas over the copper wire during copper ball formation (sparkling) is described. The prevention of chip damage resulting from hard copper wire, including underpad cracking and silicon cratering, by the double-load wire bonding technology is discussed; this technology can minimize chip damage from wire bonding stress because the bonding load is decreased during ultrasonic power oscillation. It was confirmed that copper wires have a reliability equivalent to that of gold wires. The double-load wire bonding technology makes it possible to use copper wires in MOS LSI devices on a commercial basis
  • Keywords
    MOS integrated circuits; copper; integrated circuit technology; large scale integration; lead bonding; reliability; Cu wire bonding; IC chips; MOS LSI chips; chip damage; computer simulation; double-load wire bonding technology; oxide-free spherical Cu balls; pull test; reliability; sparkling; ultrasonic power oscillation; underpad cracking; Aluminum; Bonding; Copper; Gold; Large scale integration; Manufacturing; Semiconductor films; Silicon; Stress; Wire;
  • fLanguage
    English
  • Journal_Title
    Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0148-6411
  • Type

    jour

  • DOI
    10.1109/33.62577
  • Filename
    62577