• DocumentCode
    1257902
  • Title

    Two-dimensional modeling of a micro-cell plasma in Xe driven by high frequency

  • Author

    Kurihara, Masaru ; Makabe, Toshiaki

  • Author_Institution
    Dept. of Electr. Eng., Keio Univ., Yokohama, Japan
  • Volume
    27
  • Issue
    5
  • fYear
    1999
  • fDate
    10/1/1999 12:00:00 AM
  • Firstpage
    1372
  • Lastpage
    1378
  • Abstract
    Two-dimensional simulation of a micro-cell plasma driven by high frequency at 13.56 MHz is described in Xe. The minimum sustaining voltage (Vs)min in an ideal infinite parallel plates at high frequency is first discussed as a function of both pd and fd (f the applied frequency, d the electrode distance, and p the gas pressure). As decreasing d,(Vs)min increases at fixed f, while (Vs)min decreases with increasing fd at fixed pd in a high frequency discharge under the condition of a spatial ion trapping. A capability for maintaining a micro-cell plasma is investigated under fd<υ(de)/π for different two-dimensional geometry of the micro cell (υ(de) is the effective drift velocity of electrons). The influence of the secondary electron from the electrode becomes important for the maintenance of a microcell plasma and emission efficiency. A powered ring electrode and ground plate system realizes the micro-cell plasma with high density at 13.56 MHz
  • Keywords
    high-frequency discharges; plasma simulation; plasma transport processes; xenon; 13.56 MHz; Xe; applied frequency; electrode; electrode distance; electrons effective drift velocity; gas pressure; ground plate; high frequency; high frequency discharge; infinite parallel plates; micro-cell plasma; microcell plasma; spatial ion trapping; two-dimensional geometry; two-dimensional modeling; two-dimensional simulation; Electrodes; Electron emission; Electron mobility; Electron traps; Frequency; Geometry; Partial discharges; Plasma density; Plasma simulation; Voltage;
  • fLanguage
    English
  • Journal_Title
    Plasma Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0093-3813
  • Type

    jour

  • DOI
    10.1109/27.799815
  • Filename
    799815