DocumentCode :
1257923
Title :
Particle-in-cell/Monte Carlo simulation of radio frequency SiH4/H2 discharges
Author :
Yan, Min ; Goedheer, Willem Jan
Author_Institution :
FOM Inst. for Plasma Phys., Nieuwegein, Netherlands
Volume :
27
Issue :
5
fYear :
1999
fDate :
10/1/1999 12:00:00 AM
Firstpage :
1399
Lastpage :
1405
Abstract :
In this paper we report on a study of SiH4/H2 radio-frequency discharges using the particle-in-cell/Monte Carlo (PIC/MC) method. A special procedure based on the rate balance for negative ions has been developed to speed up the simulation for this kind of electronegative discharge. The electron energy distribution function and the angular and energy distribution function of ions arriving at the substrate have been studied at different discharge settings (frequency, pressure, voltage, and power). The simulations show that the electrons are heated ohmically, so the average electron energy can be increased only by increasing the voltage. A high radical density, a high and more directional ion flux, and a low average ion energy can be obtained by a combination of a high frequency and a low RF voltage. The behavior of the dissociation rate with the discharge parameters is consistent with the experimentally observed consumption of SiH4. The simulated ion energy distribution functions are in good agreement with experimental results
Keywords :
Monte Carlo methods; high-frequency discharges; hydrogen neutral molecules; plasma CVD; plasma simulation; silicon compounds; RF discharges; RF voltage; SiH4; SiH4-H2; angular distribution function; average electron energy; average ion energy; directional ion flux; discharge parameters; discharge settings; electron energy distribution function; electronegative discharge; frequency; high frequency; ion energy distribution functions; negative ions; ohmic heating; ohmically heated electrons; particle-in-cell Monte Carlo simulation; plasma enhanced chemical vapour deposition; power; pressure; radical density; radio frequency SiH4-H2 discharges; rate balance; voltage; Chemical analysis; Chemical vapor deposition; Distribution functions; Electrons; Kinetic theory; Monte Carlo methods; Plasma chemistry; Radio frequency; Surface discharges; Voltage;
fLanguage :
English
Journal_Title :
Plasma Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0093-3813
Type :
jour
DOI :
10.1109/27.799818
Filename :
799818
Link To Document :
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