Title :
High brightness green light emitting diodes with charge asymmetric resonance tunneling structure
Author :
Chen, C.H. ; Su, Y.K. ; Chang, S.J. ; Chi, G.C. ; Sheu, J.K. ; Chen, J.F. ; Liu, C.H. ; Liaw, Y.H.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
3/1/2002 12:00:00 AM
Abstract :
In this work, we have applied the so called charge asymmetric resonance tunneling (CART) structure to nitride-based green light emitting diode (LED). From our CART LED, we observed an abrupt turn-on voltage near 2.2 V, and the forward voltage is around 3.2 V at 20 mA injection current. At 20 mA, the output power, and external quantum efficiency of the CART LED are about 4 mW, and 6.25%, respectively. The high brightness and efficiency green LED can be obtained by using the CART structure.
Keywords :
III-V semiconductors; brightness; gallium compounds; indium compounds; light emitting diodes; quantum well devices; resonant tunnelling; wide band gap semiconductors; 2.2 V; 20 mA; 3.2 V; 4 mW; 6.25 percent; CART structure; InGaN-GaN; InGaN/GaN MQW active region; abrupt turn-on voltage; charge asymmetric resonance tunneling structure; external quantum efficiency; forward voltage; green LED; green light emitting diodes; high brightness LED; nitride-based LED; Brightness; Carrier confinement; Gallium nitride; Light emitting diodes; Power generation; Quantum well devices; Radiative recombination; Resonance; Tunneling; Voltage;
Journal_Title :
Electron Device Letters, IEEE
