DocumentCode
1257955
Title
Three-dimensional spatiokinetic distributions of sputtered and scattered products of Ar+ and Cu+ impacts onto the Cu surface: molecular dynamics simulations
Author
Abrams, Cameron F. ; Graves, David B.
Author_Institution
Dept. of Chem. Eng., California Univ., Berkeley, CA, USA
Volume
27
Issue
5
fYear
1999
fDate
10/1/1999 12:00:00 AM
Firstpage
1426
Lastpage
1432
Abstract
Energy and angular distributions of reflections and sputtered atoms are essential inputs for feature profile evolution simulations. Molecular dynamics simulations are used to compute the three-dimensional energy and angular distributions for reflected and sputtered products when both Ar+ and Cu+ ions bombard a copper surface. We term these “spatiokinetic” distribution functions (SKDF´s). We show by example that SKDF´s for reflected Ar+ ions focus as the incident angle θi (normal=0°) is increased from 60-75° and broaden as the incident energy Ei is increased from 55-175 eV. We show that the SKDF´s for glancing-angle reflected Cu+ ions focus when Ei is increased from 55-175 eV. We show that the SKDF´s for copper atoms sputtered by 175 eV Ar+ are insensitive to θi;. We report total sputter yields for Ar+ and Cu+ ions at 55 and 175 eV for incident angles between 0° and 85°, and sticking probabilities for Cu+ ions for these energies and angles. Comparison to representative experimental results (Doughty et al., 1997) is given
Keywords
argon; copper; digital simulation; ion-surface impact; molecular dynamics method; positive ions; Ar; Ar+ impacts; Cu; Cu surface; Cu+ impacts; Cu+ ions; angular distributions; copper surface; energy distributions; feature profile evolution simulations; glancing-angle reflected Cu+ ions; incident angles; incident energy; molecular dynamics simulations; reflected Ar+ ions; reflected products; reflections; scattered products; spatiokinetic distribution functions; sputtered atoms; sputtered products; sticking probabilities; three-dimensional energy distributions; three-dimensional spatiokinetic distributions; Argon; Chemical vapor deposition; Computational modeling; Copper; Distributed computing; Distribution functions; Predictive models; Reflection; Scattering; Sputtering;
fLanguage
English
Journal_Title
Plasma Science, IEEE Transactions on
Publisher
ieee
ISSN
0093-3813
Type
jour
DOI
10.1109/27.799821
Filename
799821
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