A high breakdown-voltage SiCN/Si heterojunction diode for high-temperature applications

Author

Ting, Shyh-Fann ; Fang, Yean-Kuen ; Hsieh, Wen-Tse ; Tsair, Yong-Shiuan ; Chang, Cheng-Nan ; Lin, Chun-Sheng ; Hsieh, Ming-Chun ; Chiang, Hsin-Che ; Ho, Jyh-Jier

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

23

Issue

3

fYear

2002

fDate

3/1/2002 12:00:00 AM

Firstpage

142

Lastpage

144

Abstract

Cubic crystalline p-SiCN films are deposited on n-Si[100] substrates to form SiCN/Si heterojunction diodes (HJDs) with a rapid thermal chemical vapor deposition (RTCVD) technique. The developed SiCN/Si HJDs exhibit good rectifying properties up to 200/spl deg/C. At room temperature, the reverse breakdown voltage is more than 29 V at the leakage current density of 1.2/spl times/10/sup -4/ A/cm/sup 2/. Even at 200/spl deg/C, the typical breakdown voltage of SiCN/Si HJDs is still preserved about 5 V at the leakage current density of 1.47/spl times/10/sup -4/ A/cm/sup 2/. These properties are better than the /spl beta/-SiC on Si HJDs for high temperature applications.

Keywords

elemental semiconductors; high-temperature electronics; leakage currents; semiconductor device breakdown; semiconductor diodes; silicon; silicon compounds; solid-state rectifiers; wide band gap semiconductors; 200 C; 5 to 29 V; RTCVD; Si; SiCN-Si; SiCN/Si heterojunction diodes; cubic crystalline p-SiCN films; high temperature applications; leakage current density; n-Si[100] substrates; rapid thermal chemical vapor deposition; rectifying properties; reverse breakdown voltage; Chemical vapor deposition; Crystallization; Diodes; Electric resistance; Heterojunctions; Leakage current; Optical films; Semiconductor films; Substrates; Temperature;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.988818

Filename

988818