Investigation of the effect of a “cold” electron tail on trench charging

Author

Converse, Mark C. ; Hitchon, W. Nick G

Author_Institution

Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA

Volume

27

Issue

5

fYear

1999

fDate

10/1/1999 12:00:00 AM

Firstpage

1441

Lastpage

1448

Abstract

A kinetic simulation of electron and ion fluxes entering a trench has been employed to investigate the effect of the tail of the electron distribution on the self-consistent electrostatic potential distribution developed in a trench structure. The results indicate that the electron tail is probably not critical and that the low energy part of the distribution function of the ions may be the most significant component in determining the potentials developed in the trench

Keywords

elemental semiconductors; plasma materials processing; plasma sheaths; plasma simulation; plasma temperature; semiconductor technology; silicon; sputter etching; Si; cold electron tail; distribution function; electron distribution; electron fluxes; electron tail; ion fluxes; kinetic simulation; polycrystalline Si; potentials; self-consistent electrostatic potential distribution; trench charging; trench structure; Distribution functions; Electrons; Etching; Kinetic theory; Plasma temperature; Probability distribution; Silicon; Tail; Temperature dependence; Temperature distribution;

fLanguage

English

Journal_Title

Plasma Science, IEEE Transactions on

Publisher

ieee

ISSN

0093-3813

Type

jour

DOI

10.1109/27.799823

Filename

799823