Design of a Monolithic Automatic Substrate/Supply Multiplexer for DVS-Enabled Adaptive Power Converters

Author

Zheng, Chen ; Ma, Dongsheng

Author_Institution

Dept. of Electr. Eng., Univ. of Texas at Dallas, Richardson, TX, USA

Volume

58

Issue

6

fYear

2011

fDate

6/1/2011 12:00:00 AM

Firstpage

376

Lastpage

380

Abstract

It allows the converters to seamlessly regulate the output voltage at any desired level without suffering large leakage current and latch-up. In addition, an automatic supply voltage multiplexing scheme is presented to significantly improve power efficiency and reduce chip area. The proposed ASSM circuit was fabricated with an IBM 130-nm CMOS process. Experimental results show a 4.44-mV/ns switching speed with a switching voltage ranging from 0.9 to 2.5 V. Due to an accurate voltage comparison, the tracking error in steady state is effectively minimized below 5 mV. The circuit only occupies a 0.015-mm² silicon area, with maximum static power of 227 μW.

Keywords

CMOS integrated circuits; leakage currents; power supply circuits; switching convertors; ASSM circuit; DVS-enabled adaptive power converters; IBM CMOS process; automatic supply voltage multiplexing scheme; latch-up; leakage current; monolithic automatic substrate/supply multiplexer; output voltage; power 227 muW; power efficiency; size 130 nm; static power; switching speed; switching voltage; tracking error; voltage 0.9 V to 2.5 V; MOS devices; Multiplexing; Power transistors; Strontium; Substrates; Switches; Voltage control; Adaptive substrate switching; automatic supply voltage multiplexing; dynamic voltage scaling (DVS); step-up/down adaptive power converters;

fLanguage

English

Journal_Title

Circuits and Systems II: Express Briefs, IEEE Transactions on

Publisher

ieee

ISSN

1549-7747

Type

jour

DOI

10.1109/TCSII.2011.2158164

Filename

5930353