Title :
A 0.2-μm, 1.8-V, SOI, 550-MHZ, 64-b PowerPC microprocessor with copper interconnects
Author :
Aipperspach, Anthony G. ; Allen, David H. ; Cox, Dennis T. ; Phan, Nghia V. ; Storino, Salvatore N.
Author_Institution :
IBM Corp., Rochester, MN, USA
fDate :
11/1/1999 12:00:00 AM
Abstract :
A 550-MHz 64-b PowerPC processor in 0.2-um silicon-on-insulator (SOI) copper technology achieves a 22% frequency gain over a similar design in a CMOS bulk technology. Performance gains are 15%-40% at the circuit level, 24%-28%, for critical paths. Unique SOI design aspects such as history effect, lowered noise margins, parasitic bipolar current, and self-heating are considered
Keywords :
CMOS digital integrated circuits; integrated circuit design; integrated circuit noise; microprocessor chips; silicon-on-insulator; 0.2 micron; 1.8 V; 550 MHz; 64 bit; CMOS bulk technology; Cu; IC interconnects; PowerPC microprocessor; SOI; SOI design aspects; Si; critical paths; history effect; noise margins; parasitic bipolar current; performance gains; self-heating; CMOS technology; Clocks; Copper; Delay; Frequency; Integrated circuit technology; Microprocessors; Silicon on insulator technology; Voltage; Wiring;
Journal_Title :
Solid-State Circuits, IEEE Journal of
