Title :
Se-doped AlGaAs/GaAs HEMTs for stable low-temperature operation
Author :
Yokoyama, Teruo ; Suzuki, Masahisa ; Maeda, Takeshi ; Ishikawa, Tomonori ; Mimura, Takashi ; Abe, Masayuki
Author_Institution :
Fujitsu Lab. Ltd., Atsugi, Japan
fDate :
5/1/1990 12:00:00 AM
Abstract :
The fabrication of Se-doped AlGaAs/GaAs high electron mobility transistors (HEMTs) is discussed. Because the DX center concentration in Se-doped AlGaAs layers is lower than in Si-doped layers, the drain-current collapses much less at 77 K. The Se-doped HEMTs are therefore suitable for application in low-temperature LSI.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; large scale integration; selenium; AlGaAs-GaAs:Se; DX center concentration; HEMTs; drain-current; high electron mobility transistors; low-temperature LSI; stable low-temperature operation; Computer industry; Cooling; Doping; Electrodes; Electron mobility; Gallium arsenide; HEMTs; MODFETs; Temperature; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
