Title :
A 29-mm2, 1.8-V-only, 16-Mb DINOR flash memory with gate-protected-poly-diode (GPPD) charge pump
Author :
Miyawaki, Yoshikazu ; Ishizaki, Osamu ; Okihara, Yoshihiko ; Inaba, Tsutomu ; Niita, F. ; Mihara, Masaaki ; Hayasaka, Takashi ; Kobayashi, Kazuo ; Omae, Tadashi ; Kimura, Hiroshi ; Shimizu, Satoshi ; Makimoto, Hiromi ; Kawajiri, Yoshiki ; Wada, Masashi ;
Author_Institution :
Memory IC Div., Mitsubishi Electr. Corp., Hyogo, Japan
fDate :
11/1/1999 12:00:00 AM
Abstract :
A 29-mm2, 16-Mb divided bitline NOR (DINOR) flash memory is fabricated using 0.25-μm triple-well three-layer-metal CMOS technology. Read access time is 72 ns at 1.8 V. A poly diode charge-pump technique improves pump efficiency and eliminates the body effect problem
Keywords :
CMOS memory circuits; flash memories; low-power electronics; protection; 0.25 micron; 1.8 V; 16 Mbit; 72 ns; CMOS technology; DINOR flash memory; body effect problem elimination; divided bitline NOR; gate-protected-poly-diode charge pump; triple-well three-layer-metal technology; CMOS technology; Charge pumps; Circuits; Electrodes; Flash memory; Low voltage; MOSFETs; Mobile computing; P-n junctions; Semiconductor diodes;
Journal_Title :
Solid-State Circuits, IEEE Journal of
