Title :
Fabrication and electrical properties of lapped type of TMR heads for ∼50 Gb/in2 and beyond
Author :
Araki, Satoru ; Sato, Kazuki ; Kagami, Takeo ; Saruki, Syunji ; Uesugi, Takumi ; Kasahara, Noriaki ; Kuwashima, Tetsuya ; Ohta, Naoki ; Sun, Jijun ; Nagai, Kentaro ; Li, Shuxiang ; Hachisuka, Nozomu ; Hatate, Hitoshi ; Kagotani, Tsuneo ; Takahashi, Norio
Author_Institution :
Data Storage Technol. Center, TDK Corp., Nagano, Japan
Abstract :
Tunnel giant magnetoresistance (TMR) heads at ∼50 Gb/in2 have been fabricated using improved lapping process. Together with writer of 2.0 T pole materials, recording performance has been demonstrated at magnetic write width of 0.28 μm and magnetic read width of 0.18 μm. The resistance area product of final wafer data is around 5 Ω·μm2, with lead and contact resistance included, resulting in a final head resistance of around 200 Ω. The output voltage achieved for 1 mA bias current is 42 mV/μm, and the isolated pulses are stable. With a discrete preamplifier, the track density as measured by "747 curve" is 94 kTPI at a bit-error rate of 10-4 and the linear density is 508 kBPI, achieving an areal density of 48 Gb/in2. The noise analysis reveals that the noises come mainly from media and shot noise.
Keywords :
contact resistance; giant magnetoresistance; magnetic heads; magnetic recording noise; preamplifiers; shot noise; 0.18 micron; 0.28 micron; 1 mA; 2.0 T; 200 ohm; TMR heads; areal density; bit-error rate; contact resistance; discrete preamplifier; isolated pulses; lapped type; linear density; magnetic read width; magnetic write width; media noise; output voltage; recording performance; resistance area product; shot noise; track density; tunnel giant magnetoresistance; Contact resistance; Fabrication; Giant magnetoresistance; Lapping; Magnetic heads; Magnetic materials; Magnetic recording; Preamplifiers; Tunneling magnetoresistance; Voltage;
Journal_Title :
Magnetics, IEEE Transactions on
DOI :
10.1109/TMAG.2002.988914
