Room temperature extraordinary magnetoresistance of nonmagnetic narrow-gap semiconductor/metal composites: application to read-head sensors for ultrahigh-density magnetic recording

Author

Solin, S.A. ; Hines, D.R. ; Tsai, J.S. ; Pashkin, Yu A. ; Chung, S.J. ; Goel, N. ; Santos, M.B.

Author_Institution

Sci. Res. Div., NEC Res. Inst., Princeton, NJ, USA

Volume

38

Issue

1

fYear

2002

Firstpage

89

Lastpage

94

Abstract

The room temperature extraordinary magnetoresistance (EMR) of a mesoscopic sensor structure prepared from an InSb quantum well of dimension 30 nm wide×100 nm high×3 μm long is reported. The observed EMR is 4.75% at a relevant field of 0.05 T. The advantages and disadvantages of this nonmagnetic composite semiconductor/metal structure relative to that of conventional magnetic giant magnetoresistance (GMR) and tunneling magnetoresistance (TMR) devices for use as read-heads in high-density magnetic recording are discussed.

Keywords

III-V semiconductors; digital magnetic recording; electron beam lithography; indium compounds; magnetic heads; magnetoresistance; magnetoresistive devices; semiconductor quantum wells; semiconductor-metal boundaries; sputter etching; 0.05 T; 100 nm; 3 micron; 30 nm; InSb; InSb quantum well; mesoscopic sensor structure; narrow-gap semiconductor/metal composites; nonmagnetic composite semiconductor/metal structure; read heads; room temperature EMR; room temperature extraordinary magnetoresistance; ultrahigh-density magnetic recording; Colossal magnetoresistance; Extraordinary magnetoresistance; Geometry; Giant magnetoresistance; Magnetic materials; Magnetic recording; Magnetic sensors; Semiconductor materials; Temperature sensors; Tunneling magnetoresistance;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/TMAG.2002.988917

Filename

988917