Title :
High-power operation mode of pulsed IMPATT diodes
Author :
Behr, W. ; Luy, J.F.
Author_Institution :
Daimler-Benz AG Res. Center, Ulm, West Germany
fDate :
5/1/1990 12:00:00 AM
Abstract :
Pulsed silicon double-drift IMPATT diodes that yield 42 W at 96 GHz are discussed. This is about twice the value reported previously. Owing to the considerable input powers ( approximately=500 W), these diodes are mounted on diamond heat sinks. Because of the strong carrier injection, the field distribution in the diode is similar to that in a p-i-n diode. An attempt is made to explain the results using T. Misawa´s (1966) p-i-n type theory. The large-signal; avalanche resonant frequency is close to the operation frequency. Conventional Read-type theory fails to explain these results because of the current densities employed in the experiments.<>
Keywords :
IMPATT diodes; elemental semiconductors; silicon; 42 W; 96 GHz; Si; avalanche resonant frequency; carrier injection; current densities; diamond heat sinks; double-drift IMPATT diodes; input powers; large-signal; p-i-n type theory; pulsed IMPATT diodes; Amplitude modulation; Current density; Diodes; Equations; Heat sinks; Power generation; Resistance heating; Resonant frequency; Silicon; Thermal resistance;
Journal_Title :
Electron Device Letters, IEEE
