Operating CMOS after a Si-MBE process: a precondition for future three-dimensional circuits

Author

König, U. ; Kuisl, M. ; Schäffler, F. ; Fischer, G. ; Kiss, Th

Author_Institution

Daimler Benz Forschungsinst., Ulm, West Germany

Volume

11

Issue

5

fYear

1990

fDate

5/1/1990 12:00:00 AM

Firstpage

218

Lastpage

220

Abstract

Complete CMOS integrated circuits grown by Si molecular beam epitaxy (MBE) are discussed. The morphology of the MBE films and the electrical performance of the CMOS transistors were investigated. The CMOS time-keeping circuits work after an MBE process. Indications of radiation damage (threshold shift up to 200 mV) induced by the Si electron-beam evaporator at epitaxial temperatures of 550 degrees C are observed. These are completely gone at 750 degrees C, at which temperature virtually no effect of the MBE process on the CMOS characteristics could be determined. The observed compatibility of Si-MBE with CMOS ICs is an important prerequisite for the monolithic integration of Si-based devices with the complexity level provided by MOS technologies.<>

Keywords

CMOS integrated circuits; elemental semiconductors; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; silicon; 550 degC; CMOS integrated circuits; Si; electrical performance; epitaxial temperatures; molecular beam epitaxy; monolithic integration; radiation damage; three-dimensional circuits; threshold shift; time-keeping circuits; CMOS integrated circuits; CMOS process; CMOS technology; Electrons; Integrated circuit technology; Molecular beam epitaxial growth; Monolithic integrated circuits; Morphology; Temperature; Three-dimensional integrated circuits;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.55255

Filename

55255