Title :
Low threshold current MOVPE grown GaInAs-Al(Ga)InAs separate confinement heterostructure multiquantum well metal-clad ridge-waveguide lasers emitting at 1585 nm
Author :
Stegmüller, B. ; Gessner, R. ; Beschorner, M. ; Franz, G. ; Sacher, D. ; Borchert, B.
Author_Institution :
Siemens AG, Munchen, West Germany
Abstract :
GaInAs-Al(Ga)InAs separate confinement heterostructure (SCH) multiquantum-well (MQW) metal-clad ridge-waveguide (MCRW) laser diodes were successfully fabricated for the first time from layer structures grown by atmospheric pressure (AP) metalorganic vapor-phase epitaxy (MOVPE) on InP substrate without any use of phosphine. CW operation of 2.9- mu m-wide and 400- mu m-long MCRW laser diodes emitting at 1585 nm was demonstrated with a minimum threshold current of 38 mA.<>
Keywords :
III-V semiconductors; optical waveguides; semiconductor junction lasers; vapour phase epitaxial growth; 1585 nm; 2.9 micron; 400 micron; CW operation; GaInAs-AlInAs; GaInAs-GaInAs; InP substrate; MOVPE grown; laser diodes; metalorganic vapor-phase epitaxy; minimum threshold current; separate confinement heterostructure multiquantum well metal-clad ridge-waveguide lasers; Diode lasers; Epitaxial growth; Epitaxial layers; Molecular beam epitaxial growth; Optical buffering; Optical materials; Quantum well devices; Quantum well lasers; Substrates; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
